TLP2362 Datasheet, PDF (1/16 Pages) Toshiba Semiconductor – Photocouplers GaA-As Infrared LED and Photo IC

Photocouplers GaAℓAs Infrared LED & Photo IC
TLP2362
TLP2362
1. Applications
• Factory Automation (FA)
• Plasma Display Panels (PDPs)
• Measuring Instruments
2. General
The Toshiba TLP2362 consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain,
high-speed photodetectors. The TLP2362 guarantees operation at up to 125  and on supplies from 2.7 V to 5.5
V. It is housed in the SO6 package. The TLP2362 has an internal Faraday shield that provides a guaranteed
common-mode transient immunity of ±20 kV/µs.
3. Features
(1) Inverter logic type (open collector output)
(2) Package: SO6
(3) Operating temperature: -40 to 125 
(4) Supply voltage: 2.7 to 5.5 V
(5) Data transfer rate: 10 MBd (typ.) (NRZ)
(6) Threshold input current: 5.0 mA (max)
(7) Supply current: 4 mA (max)
(8) Common-mode transient immunity: ±20 kV/µs (min)
(9) Isolation voltage: 3750 Vrms (min)
(10) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (V4).
©2016 Toshiba Corporation
1
Start of commercial production
2011-05
2016-01-19
Rev.6.0