TLP209D_14 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS BOARD TESTERS / SCANNERS

TOSHIBA PHOTOCOUPLER PHOTO RELAY
TLP209D
MEASUREMENT INSTRUMENTS
LOGIC IC TESTERS / MEMORY TESTERS
BOARD TESTERS / SCANNERS
TLP209D
Unit: mm
The TOSHIBA TLP209D consists of a gallium arsenide infrared emitting
diode optically coupled to a photo-MOS FET in a plastic SOP package.
Its characteristics include low OFF-state current and low output pin
capacitance, enabling it to be used in high-frequency measurement
instruments.
Features
• 8 pin SOP (2.54SOP8)
• 2-Form-A
• Peak Off-State Voltage
• Trigger LED Current
• On-State Current
• On-State Resistance
• Output Capacitance
• Isolation Voltage
: 2.1 mm high, 2.54 mm pitch
: 200 V (min)
: 3 mA (max)
: 50 mA (max)
: 50 ohm (max)
: 20 pF (max)
: 1500 Vrms (min)
Pin Configuration (top view)
1, 3 : ANODE
1
8
2, 4 : CATHODE
5 : DRAIN D1
6 : DRAIN D2
7 : DRAIN D3
8 : DRAIN D4
2
7
Schematic
1
2
JEDEC
JEITA
TOSHIBA
11−10H1
Weight: 0.2 g (typ.)
8
7
3
6
3
6
4
5
4
5
Start of commercial production
2008/10
1
2014-09-22