TLN227_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – LEAD FREE PRODUCT FOR SPACE-OPTICAL-TRANSMISSION

TLN227(F)
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN227(F)
Lead(Pb)-Free
For Space−Optical−Transmission
Unit: mm
• High radiant power: Po = 18mW (typ.) at I_F = 50mA
• Wide half−angle value: = θ1 / 2 ± 21° (typ.)
• High−speed response: t_r, t_f = 30ns (typ.)
• Light source for remote control
• Designed for transmission of wireless AVsignals purpose.
• Designed for high−speed data transmission
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I_F
100
mA
Pulse forward current
I_FP
1000
(Note 1)
mA
Power dissipation
Reverse voltage
Operating temperature
Storage temperature
Soldering temperature (5s)
P_D
220
mW
V_R
4
V
T_opr
−25~85
°C
T_stg
−30~100
°C
T_sol
260
°C
TOSHIBA
4-6J1
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Pin Connection
temperature, etc.) may cause this product to decrease in the
1. Anode
reliability significantly even if the operating conditions (i.e.
1
2 _{2. Cathode}
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Frequency = 100kHz, duty = 1%
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Forward voltage
V_F
I_F = 100mA
―
1.8
2.2
V
Reverse current
I_R
V_R = 4V
―
―
60
μA
Radiant power
P_O
I_F = 50mA
14
18
―
mW
Radiant intensity
I_E
I_F = 50mA
―
100
― mW / sr
Rise time, fall time
tr, tf
I_FP = 100mA, P_W = 100ns
―
30
―
ns
Cut−off frequency
(Note 2)
fc
I_F = 50mA_DC + 5mAp−p
10
15
―
MHz
Capacitance
C_T
V_R = 0, f = 1MHz
―
110
―
pF
Peak emission wavelength
λ_P
I_F = 50mA
830
870
900
nm
Spectral line half width
Half value angle
Δλ
I_F = 50mA
θ¹
2
I_F = 50mA
―
50
―
nm
―
±5
―
°
Note 2: Frequency when modulation light power decreases by 3dB from 1 MHz.
1
2007-10-01