TLN226_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION

TLN226(F)
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN226(F)
Lead(Pb)-Free
For Space−optical−transmission
Unit: mm
• High radiant power: Po = 18mW(typ.) at IF = 50mA
• Wide half−angle value: θ1/2 = ±13°(typ.)
• high-speed response: t_r,t_f = 30ns(typ.)
• Light source for remote control
• Designed for transmission of wireless AV signals purpose.
• Designed for high−speed data transmission
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I_F
100
mA
Pulse forward current
I_FP
1000(Note1) mA
Power dissipation
P_D
220
mW
Reverse voltage
Operating temperature
Storage temperature
Soldering temperature (5s)
V_R
4
V
T_opr
−25~85
°C
T_stg
−30~100
°C
T_sol
260
°C
TOSHIBA
4−5M1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Pin Connection
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
1. Anode
1
2 _{2. Cathode}
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Frequency = 100kHz, duty = 1%
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Forward voltage
V_F
I_F = 100mA
⎯
1.8
2.2
V
Reverse current
I_R
V_R = 4V
⎯
⎯
60
μA
Radiant power
P_O
I_F = 50mA
14
18
⎯
mW
Radiant intensity
I_E
I_F = 50mA
⎯
60
⎯ mW / sr
Rise time, fall time
t_r, t_f
I_FP = 100mA, P_W = 100ns
⎯
30
⎯
ns
Cut−off frequency
(Note 2)
f_c
I_F = 50mA_DC + 5mA_p-p
10
15
⎯
MHz
Capacitance
C_T
V_R = 0, f = 1MHz
⎯
110
⎯
P^F
Peak emission wavelength
λ_P
I_F = 50mA
830
870
900
nm
Spectral line half width
Half value angle
Δλ
I_F = 50mA
θ¹
2
I_F = 50mA
⎯
50
⎯
nm
⎯
±13
⎯
°
Note 2: Frequency when modulation light power decreases by 3dB from 1 MHz.
1
2007-10-01