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| TK8S06K3L Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators | |||
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MOSFETs Silicon N-channel MOS (U-MOS î¯)
TK8S06K3L
1. Applications
⢠Automotive
⢠Motor Drivers
⢠DC-DC Converters
⢠Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 43 m⦠(typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(3) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK8S06K3L
1: Gate
2: Drain (heatsink)
3: Source
DPAK+
4. Absolute Maximum Ratings (Note) (Ta = 25î unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
8
A
Drain current (pulsed)
(Note 1)
IDP
16
Power dissipation
(Tc = 25î)
PD
25
W
Single-pulse avalanche energy
(Note 2)
EAS
16
mJ
Avalanche current
IAR
8
A
Channel temperature
(Note 3)
Tch
175
î
Storage temperature
(Note 3)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2012-02-02
Rev.2.0
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