TK80F08K3 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Swiching Regulator

TK80F08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK80F08K3
Swiching Regulator
• Low drain-source ON-resistance: R_{DS (ON)} = 3.4 mΩ (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 75 V)
• Enhancement-model: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
10.0 ± 0.3
9.5 ± 0.2
Unit: mm
0.4 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
1.1
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
(Note 4)
Storage temperature range (Note 4)
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
75
V
75
V
±20
V
80
A
320
300
W
250
mJ
80
A
30
mJ
175
°C
−55 to 175
°C
0.76 ± 0.1
1.4 ± 0.1
2.54 ± 0.25
2.35 ± 0.1
2.34 ± 0.25
123
0.4 ± 0.1
1.GATE
12₂.. _.（D(HGDH_RREAE_ATA_AAIE_{NITTNSSIINNKK）)}
33. . SSOOUURSCEE
8.0
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-10W1A
Weight: 1.07 g (typ.)
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
0.5
°C/W
1
Note 1: Please use devices on condition that the channel temperature
is below 175°C.
Note 2: V_DD = 25 V, T_ch = 25°C, L = 58 μH, R_G = 1 Ω, I_AR = 80 A
3
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
Note 4: 175°C refers to AEC-Q101.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2010-02-02