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| TK80E06K3A Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-channel MOS (U-MOS ) | |||
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MOSFETs Silicon N-channel MOS (U-MOS î¯)
TK80E06K3A
1. Applications
⢠Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 4.8 m⦠(typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK80E06K3A
1: Gate
2: Drain (heatsink)
3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25î unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
80
A
Drain current (pulsed)
(Note 1)
IDP
240
Power dissipation
(Tc = 25î)
PD
125
W
Single-pulse avalanche energy
(Note 2)
EAS
76
mJ
Avalanche current
IAR
80
A
Channel temperature
Tch
150
î
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-08-09
Rev.1.0
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