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TK6P53D Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications | |||
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TK6P53D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ï-MOSâ
¦)
TK6P53D
Switching Regulator Applications
Unit: mm
⢠Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.)
⢠High forward transfer admittance: âªYfs⪠= 2.5 S (typ.)
⢠Low leakage current: IDSS = 10 μA (max) (VDS = 525 V)
⢠Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.6 ± 0.2
5.34 ± 0.13
0.58MAX
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
525
V
±30
V
6
A
24
100
W
119
mJ
6
A
10
mJ
150
°C
â55 to 150
°C
1.14MAX
2.29
0.76 ± 0.12
123
1. GATE
2. DRAIN
ï¼HEAT SINKï¼
3. SOURCE
JEDEC
â¯
JEITA
â¯
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and
Methodsââ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C. 1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.67 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2010-01-19
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