TK60P03M1 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – DC-DC Converters

MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK60P03M1
1. Applications
• DC-DC Converters
• Desktop Computers
2. Features
(1) High-speed switching
(2) Low gate charge: Q_SW = 13 nC (typ.)
(3) Low drain-source on-resistance: R_DS(ON) = 4.6 mΩ (typ.) (V_GS = 10 V)
(4) Low leakage current: I_DSS = 10 µA (max) (V_DS = 30 V)
(5) Enhancement mode: V_th = 1.3 to 2.3 V (V_DS = 10 V, I_D = 0.5 mA)
3. Packaging and Internal Circuit
TK60P03M1
1: Gate
2: Drain (heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
30
V
Drain-gate voltage
(R_GS = 20 kΩ)
V_DGR
30
Gate-source voltage
V_GSS
±20
Drain current (DC)
(Note 1)
I_D
60
A
Drain current (pulsed)
(Note 1)
I_DP
120
Power dissipation
(T_c = 25)
P_D
63
W
Single-pulse avalanche energy
(Note 2)
E_AS
94
mJ
Avalanche current
I_AR
60
A
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-07-22
Rev.2.0