TK60J25D Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Switching Voltage Regulators

MOSFETs Silicon N-Channel MOS (π-MOS)
TK60J25D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: R_DS(ON) = 0.0285 Ω (typ.)
(2) Low leakage current: I_DSS = 10 µA (max) (V_DS = 250 V)
(3) Enhancement mode: V_th = 1.5 to 3.5 V (V_DS = 10 V, I_D = 1 mA)
3. Packaging and Internal Circuit
TK60J25D
1: Gate (G)
2: Drain (D)(Heatsink)
3: Source (S)
TO-3P(N)
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
250
V
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
(T_c = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
I_DR
I_DRP
T_ch
T_stg
±20
60
A
180
410
W
497
mJ
60
A
60
180
150

-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-10-10
Rev.2.0