TK4P60DB Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

TK4P60DB
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4P60DB
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: R_{DS (ON)} = 1.6 Ω (typ.)
• High forward transfer admittance: ⎪Y_fs⎪ = 2.2 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 600 V)
• Enhancement-mode: V_th = 2.4 to 4.4 V (V_DS = 10 V, I_D = 1 mA)
6.6 ± 0.2
5.34 ± 0.13
0.58MAX
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
600
V
±30
V
3.7
A
14.8
80
W
147
mJ
3.7
A
8
mJ
150
°C
−55 to 150
°C
1.14MAX
2.29
0.76 ± 0.12
123
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURCE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
R_{th (ch-c)}
1.56
°C/W
Thermal resistance, channel to ambient
R_{th (ch-a)}
125
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C. ₁
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 18.7 mH, R_G = 25 Ω, I_AR = 3.7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
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2010-02-25