TK4P60DA Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

TK4P60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4P60DA
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: R_{DS (ON)} = 1.7 Ω (typ.)
• High forward transfer admittance: ⎪Y_fs⎪ = 2.2 S (typ.)
• Low leakage current: I_DSS = 10μA (max) (V_DS = 600 V)
• Enhancement-mode: V_th = 2.4 to 4.4 V (V_DS = 10 V, I_D = 1 mA)
6.6 ± 0.2
5.34 ± 0.13
0.58MAX
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
600
V
±30
V
3.5
A
14
80
W
132
mJ
3.5
A
8
mJ
150
°C
−55 to 150
°C
1.14MAX
2.29
0.76 ± 0.12
123
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURCE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R_{th (ch-c)}
R_{th (ch-a)}
Max
Unit
1.56
°C/W
125
°C/W
Internal Connection
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
1
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 18.9 mH, R_G = 25 Ω, I_AR = 3.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2010-03-09