TK40M60U Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Switching Voltage Regulators

MOSFETs Silicon N-Channel MOS (DTMOS)
TK40M60U
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: R_DS(ON) = 0.065 Ω (typ.)
(2) High forward transfer admittance: |Y_fs| = 30 S (typ.)
(3) Low leakage current: I_DSS = 100 µA (max) (V_DS = 600 V)
(4) Enhancement mode: V_th = 3.0 to 5.0 V (V_DS = 10 V, I_D = 1 mA)
3. Packaging and Internal Circuit
TK40M60U
1: Gate (G)
2: Drain (D)
3: Source (S)
TO-3P(N)IS
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
600
V
Gate-source voltage
V_GSS
±30
Drain current (DC)
(Note 1)
I_D
40
A
Drain current (pulsed)
(Note 1)
I_DP
80
Power dissipation
(T_c = 25)
P_D
90
W
Single-pulse avalanche energy
(Note 2)
E_AS
540
mJ
Avalanche current
I_AR
20
A
Repetitive avalanche energy
(Note 3)
E_AR
9
mJ
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-04-30
Rev.3.0