TK40J60T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type (DTMOS)

TK40J60T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)
TK40J60T
Switching Regulator Applications
• Low drain-source ON resistance: R_{DS (ON)} = 0.068Ω (typ.)
• High forward transfer admittance: ⎪Y_fs⎪ = 25 S (typ.)
• Low leakage current: I_DSS = 100 μA (V_DS = 600 V)
• Enhancement-mode: V_th = 3.0~5.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 3)
Repetitive avalanche energy
Channel temperature
Storage temperature range
Symbol
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
600
V
±30
V
40
A
80
400
W
576
mJ
40
A
40
mJ
150
°C
-55~150
°C
15.9max.
Unit: mm
Ф3.2±0.2
2.0±0.3
1.0
＋0.3
－0.25
5.45±0.2
5.45±0.2
12 3
1. Gate
2. Drain(heat sink)
3. Source
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
R_{th (ch-c)}
0.313
°C/W
Thermal resistance, channel to ambient
R_{th (ch-a)}
50
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C. ₁
Note 2: V_DD = 90 V, T_ch = 25 °C (initial), L = 0.63 mH, R_G = 25 Ω, I_AR = 40 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
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1
2007-08-30