TK40D10J1 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

TK40D10J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK40D10J1
Switching Regulator Applications
Unit: mm
• Small gate charge: Q_g = 76nC (typ.)
• Low drain-source ON-resistance: R_{DS (ON)} = 11.5 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 90 S
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 100 V)
• Enhancement mode: V_th = 1.1 to 2.3 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
10.0±0.3
9.5±0.2
A
Ф3.65±0.2
0.6±0.1
1.1±0.15
0.75±0.25
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
100
V
100
V
±20
V
40
A
160
100
W
202
mJ
40
A
5.9
mJ
150
°C
−55 to 150
°C
0.62±0.15
Ф0.2 M A
2.54
2.54
+0.25
0.57 _-0.10
2.53±0.2
123
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-10V1A
Weight: 1.35 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
1.25
83.3
°C/W
°C/W
Note 1: Ensure that the channel and lead temperatures do not exceed 150°C.
Note 2: V_DD = 25 V, T_ch = 25°C, L = 200 μH, I_AR = 40 A, R_G = 1Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Internal Connection
2
1
3
1
2009-09-29