TK40A10K3 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

TK40A10K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK40A10K3
Switching Regulator Application
• Low drain-source ON resistance: R_{DS (ON)} = 11.5 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 80 S
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 100 V)
• Enhancement-mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
100
V
±20
V
40
A
160
40
W
137
mJ
40
A
3.3
mJ
150
°C
−55 to 150
°C
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Internal Connection
2
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel & lead temperature does not exceed 150°C.
1
Note 2: V_DD = 50 V, T_ch = 25°C, L = 100 μH, I_AR = 40 A, R_G = 1 Ω
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Handle with care.
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2009-09-29