TK3A65DA Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

TK3A65DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK3A65DA
Switching Regulator Applications
• Low drain-source ON-resistance: R_{DS (ON)} = 2.3 Ω(typ.)
• High forward transfer admittance: |Y_fs| = 2.2 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 650 V)
• Enhancement mode: V_th = 2.4 to 4.4 V (V_DS = 10 V, I_D = 1 mA)
Ф3.2 ± 0.2 ^{10 ± 0.3}
A
Unit: mm
2.7 ± 0.2
1.14 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
0.69 ± 0.15
Ф0.2 M A
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
650
V
±30
V
2.5
A
10
35
W
244
mJ
2.5
A
3.5
mJ
150
°C
−55 to 150
°C
2.54
2.54
123
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
3.57
°C/W
62.5
°C/W
1
Note 1:Ensure that the channel temperature does not exceed 150℃.
Note 2: V_DD = 90 V, T_ch = 25°C(initial), L = 69 mH, R_G = 25 Ω, I_AR = 2.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-12-08