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| TK32E12N1 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-channel MOS (U-MOS-H) | |||
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MOSFETs Silicon N-channel MOS (U-MOSî³-H)
TK32E12N1
1. Applications
⢠Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 11.0 m⦠(typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TK32E12N1
TO-220
1: Gate
2: Drain (heatsink)
3: Source
1
2012-08-09
Rev.1.0
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