TK25A10K3 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)

TK25A10K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK25A10K3
Swiching Regulator Applications
• Low drain-source ON resistance: R_{DS (ON)} = 31 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 50 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 100 V)
• Enhancement-model: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
100
V
100
V
±20
V
25
A
50
25
W
39
mJ
25
A
1.72
mJ
150
°C
−55 to 150
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
TOSHIBA
⎯
SC-67
2-10U1B
Note:
Using continuously under heavy loads (e.g. the application of
Weight: 1.7 g (typ.)
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 25 V, T_ch = 25°C, L = 100 μH, R_G = 25 Ω, I_AR = 25 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
1
Thermal resistance, channel to case
R_{th (ch−c)}
5.0
°C / W
Thermal resistance, channel to
ambient
R_{th (ch−a)}
62.5
°C / W
3
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2009-03-23