TK20J60U Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

TK20J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSᶘ)
TK20J60U
Switching Regulator Applications
• Low drain-source ON resistance: R_{DS (ON)} = 0.165Њ (typ.)
• High forward transfer admittance: ⎪Y_fs⎪ = 12 S (typ.)
• Low leakage current: I_DSS = 100 ЖA (V_DS = 600 V)
• Enhancement-mode: V_th = 3.0~5.0 V (V_DS = 10 V, I_D = 1 mA)


Unit: mm
15.9 MAX.
и3.2 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 3)
Repetitive avalanche energy
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
600
V
±30
V
20
A
40
190
W
144
mJ
20
A
19
mJ
150
°C
−55 to 150
°C
2.0 ± 0.3
1.0
Ê´0.3
ʵ0.25
5.45 ± 0.2
5.45 ± 0.2
123
1. Gate
2. Drain(heat sink)
3. Source
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
R_{th (ch-c)}
0.658
°C/W
Thermal resistance, channel to ambient
R_{th (ch-a)}
50
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C. ₁
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 0.63 mH, R_G = 25Њ, I_AR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
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1
2008-06-11