TK20J50D Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

TK20J50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK20J50D
Switching Regulator Applications
• Low drain-source ON-resistance: R_{DS (ON)} = 0.22 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 8.5 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 500 V)
• Enhancement mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
2.0 ± 0.3
1.0
＋0.3
－0.25
Characteristics
Symbol
Rating
Unit
5.45 ± 0.2
5.45 ± 0.2
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
500
V
±30
V
20
A
80
280
W
470
mJ
20
A
28
mJ
150
°C
−55 to 150
°C
123
1. Gate
2. Drain(heat sink)
3. Source
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
0.446
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
1
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 2.0 mH, R_G = 25 Ω, I_AR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2011-04-26