TK19H50C Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MOS VI)

TK19H50C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK19H50C
Switching Regulator Applications
Unit: mm
Low drain−source ON resistance : RDS (ON) = 0. 25Ω (typ.)
High forward transfer admittance : |Yfs| = 14 S (typ.)
Low leakage current
: IDSS = 100 µA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
500
V
500
V
±30
V
19
A
76
A
150
W
968
mJ
19
A
15
mJ
150
°C
−55~150
°C
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16K1A
Weight: 3.8 g (typ.)
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch−c)}
0.833
°C / W
Thermal resistance, channel to
ambient
R_{th (ch−a)}
50
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 4.56 mH, R_G = 25 Ω, I_AR = 19 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2005-08-23