TK18A30D Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Switching Voltage Regulators

MOSFETs Silicon N-Channel MOS (π-MOS)
TK18A30D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: R_DS(ON) = 0.1 Ω (typ.)
(2) Low leakage current: I_DSS = 10 µA (max) (V_DS = 300 V)
(3) Enhancement mode: V_th = 1.5 to 3.5 V (V_DS = 10 V, I_D = 1 mA)
3. Packaging and Internal Circuit
TK18A30D
TO-220SIS
1: Gate (G)
2: Drain (D)
3: Source (S)
1
2011-04-22
Rev.1.0