TK16V60W Datasheet, PDF (1/10 Pages) –

MOSFETs Silicon N-Channel MOS (DTMOS)
TK16V60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: R_DS(ON) = 0.16 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: V_th = 2.7 to 3.7 V (V_DS = 10 V, I_D = 0.79 mA)
3. Packaging and Internal Circuit
TK16V60W
DFN8x8
1: Gate
2: Source1
3,4: Source2
5: Drain (Heatsink)
Notice:
Please use the source1 pin for
gate input signal return. Make
sure that the main current flows
into the source2 pins.
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
600
V
Gate-source voltage
V_GSS
±30
Drain current (DC)
(Note 1)
I_D
15.8
A
Drain current (pulsed)
(Note 1)
I_DP
63.2
Power dissipation
(T_c = 25)
P_D
139
W
Single-pulse avalanche energy
(Note 2)
E_AS
179
mJ
Avalanche current
I_AR
4
A
Reverse drain current (DC)
(Note 1)
I_DR
15.8
Reverse drain current (pulsed)
(Note 1)
I_DRP
63.2
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2013-06-07
Rev.1.0