TK12X60U Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Switching Regulator Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSᶘ)
TK12X60U
Switching Regulator Applications
TK12X60U


Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 0.36Њ (typ.)
• High forward transfer admittance: ⎪Y_fs⎪ = 7.0 S (typ.)
• Low leakage current: I_DSS = 100 ЖA (V_DS = 600 V)
• Enhancement-mode: V_th = 3.0~5.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 3)
Repetitive avalanche energy
Channel temperature
Storage temperature range
Symbol
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
600
V
±30
V
12
A
24
100
W
69
mJ
12
A
10
mJ
150
°C
-55~150
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-9F1C
Weight : 0.74 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
4
Thermal resistance, channel to case
R_{th (ch-c)}
1.25
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 0.84 mH, R_G = 25Њ, I_AR = 12 A
1
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
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2008-07-01