TK12X53D Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

TK12X53D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK12X53D
Switching Regulator Applications
• Low drain-source ON resistance: R_{DS (ON)} = 0.5 Ω (typ.)
• High forward transfer admittance: ⎪Y_fs⎪ = 6.0 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 525 V)
• Enhancement-mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
9.2 MAX.
7.0 ± 0.2
4
Unit: mm
0.4 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
525
V
±30
V
12
A
48
150
W
378
mJ
12
A
15
mJ
150
°C
−55 to 150
°C
2.0 1.5 2.0 2.5
12
3
1.0 ± 0.2 1.0 ± 0.2 ^{3.6 ± 0.2}
1. GATE ：G
2. N.C.
3. SOURCE ：S
4. DRAIN ：D
JEDEC
⎯
JEITA
SC-97
TOSHIBA
2-9F1C
Weight : 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max
Unit
4
Thermal resistance, channel to case
R_{th (ch-c)}
0.833
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 4.5 mH, R_G = 25 Ω, I_AR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
1
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2010-08-27