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TK12J60U Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications | |||
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TK12J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSá¶)
TK12J60U
Switching Regulator Applications
⢠Low drain-source ON resistance: RDS (ON) = 0.36Р(typ.)
⢠High forward transfer admittance: âªYfs⪠= 7.0 S (typ.)
⢠Low leakage current: IDSS = 100 ÐA (VDS = 600 V)
⢠Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
15.9 MAX.
и3.2 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 3)
Repetitive avalanche energy
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
V
±30
V
12
A
24
144
W
69
mJ
12
A
14
mJ
150
°C
â55 to 150
°C
2.0 ± 0.3
1.0
Ê´0.3
ʵ0.25
5.45 ± 0.2
5.45 ± 0.2
123
1. Gate
2. Drain(heat sink)
3. Source
JEDEC
â¯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Rth (ch-c)
0.868
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C. 1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.84 mH, RG = 25Ð, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2008-06-11
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