TK12E60W Datasheet, PDF (1/10 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS (DTMOS)

MOSFETs Silicon N-Channel MOS (DTMOS)
TK12E60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: R_DS(ON) = 0.265 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: V_th = 2.7 to 3.7 V (V_DS = 10 V, I_D = 0.6 mA)
3. Packaging and Internal Circuit
TK12E60W
TO-220
1: Gate
2: Drain (Heatsink)
3: Source
1
2012-08-28
Rev.2.0