TK12A60U Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)

TK12A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK12A60U
Switching Regulator Applications
• Low drain-source ON-resistance
: R_{DS (ON)} = 0.36 Ω (typ.)
• High forward transfer admittance : ⎪Y_fs⎪ = 7.0 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 600 V)
• Enhancement-mode: V_th = 3.0 to 5.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
600
V
±30
V
12
A
24
35
W
69
mJ
12
A
3.5
mJ
150
°C
-55 to 150
°C
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
R_{th (ch-c)}
3.57
°C/W
Thermal resistance, channel to ambient
R_{th (ch-a)}
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
1
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 0.84 mH, R_G = 25 Ω, I_AR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2010-11-02