TK07H90A Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

TK07H90A
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV)
TK07H90A
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance : R_{DS (ON)} = 1.6Ω (typ.)
z High forward transfer admittance : |Y_fs| =5.0 S (typ.)
z Low leakage current
: I_DSS = 100 μA (max) (V_DS = 720V)
z Enhancement mode
: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
900
V
900
V
±30
V
7
A
21
A
150
W
491
mJ
7
A
15
mJ
150
°C
−55~150
°C
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16K1A
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch−c)}
0.833
°C / W
Thermal resistance, channel to
ambient
R_{th (ch−a)}
50
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 18.4 mH, R_G = 25 Ω, I_AR = 7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-13