TJ11A10M3 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOS)

MOSFETs Silicon P-Channel MOS (U-MOS)
TJ11A10M3
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: R_DS(ON) = 100 mΩ (typ.) (V_GS = -10 V)
(2) Low leakage current: I_DSS = -10 µA (max) (V_DS = -100 V)
(3) Enhancement mode: V_th = -2.0 to -4.0 V (V_DS = -10 V, I_D = -1 mA)
3. Packaging and Internal Circuit
TJ11A10M3
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
-100
V
Gate-source voltage
V_GSS
±20
Drain current (DC)
(Note 1)
I_D
-11
A
Drain current (pulsed)
(Note 1)
I_DP
-22
Power dissipation
(T_c = 25)
P_D
24
W
Single-pulse avalanche energy
(Note 2)
E_AS
37
mJ
Avalanche current
I_AR
-11
A
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2012-08-31
Rev.1.0