TIM7785-8UL_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM7785-8UL
FEATURES
n HIGH POWER
n BROAD BAND INTERNALLY MATCHED FET
P1dB=39.5dBm at 7.7GHz to 8.5GHz
n HIGH GAIN
n HERMETICALLY SEALED PACKAGE
G1dB= 8.5dB at 7.7GHz to 8.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
P_1dB
dBm 38.5 39.5 
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
G1dB
IDS1
∆G
ηadd
IM3
VDS= 10V
f = 7.7 to 8.5GHz
Two-Tone Test
Po= 28.5dBm
dB 7.5 8.5 
A
 2.2 2.6
dB   ±0.6
%
 35 
dBc -44 -47 
Drain Current
IDS2
(Single Carrier Level)
A
Channel Temperature Rise
∆Tch
(VDS X IDS + Pin – P1dB)
°C
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
 2.2 2.6
  80
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITIONS
gm VDS= 3V
IDS= 3.0A
VGSoff VDS= 3V
IDS= 30mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -100µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS  1800 
V -1.0 -2.5 -4.0
A
 5.2 
V
-5  
°C/W  2.5 3.5
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006