TIM7785-30SL_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM7785-30SL
FEATURES
n LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Po= 34.5 dBm,
Single Carrier Level
n HIGH POWER
P1dB=45.0dBm at 7.7GHz to 8.5GHz
n HIGH GAIN
G1dB=6.0dB at 7.7GHz to 8.5GHz
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT
Output Power at 1dB Gain
Compression Point
P1dB
dBm
Power Gain at 1dB Gain
Compression Point
Drain Current
G1dB
VDS=10V
dB
f = 7.7 to 8.5GHz
IDS1
A
Gain Flatness
∆G
dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation
IM3
Two-Tone Test
dBc
Distortion
Po=34.5dBm
Drain Current
IDS2
(Single Carrier Level)
A
Channel Temperature Rise
∆Tch ^{(VDS X IDS + Pin – P1dB)} °C
X Rth(c-c)
Recommended Gate Resistance(Rg): 28 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
MIN.
44.5
5.0



-42


TYP. MAX.
45.0 
6.0 
7.0 8.0
 ±0.8
34 
-45 
7.0 8.0
 100
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITIONS
gm VDS= 3V
IDS= 10A
VGSoff VDS= 3V
IDS= 100mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -350µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS  6300 
V -1.0 -2.5 -4.0
A
 18 
V
-5
°C/W 

1.0 1.3
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006