TIM5359-80SL Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM5359-80SL
Preliminary
FEATURES
n LOW INTERMODULATION DISTORTION
IM3=-30 dBc at Pout= 42.0dBm
Single Carrier Level
n HIGH POWER
P1dB=49.0dBm at 5.3GHz to 5.9GHz
n HIGH GAIN
G1dB=7.5dB at 5.3GHz to 5.9GHz
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
SYMBOL
P1dB
CONDITIONS
UNIT
dBm
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
G1dB
IDS1
∆G
ηadd
IM3
VDS= 10V
dB
IDSset=10.0A
f = 5.3 to 5.9GHz
A
dB
%
Two-Tone Test
dBc
Po=42.0dBm
Drain Current
IDS2
(Single Carrier Level)
A
Channel Temperature Rise
∆Tch
(VDS X IDS +Pin-P1dB)
°C
X Rth(c-c)
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
SYMBOL
gm
VGSoff
IDSS
VGSO
CONDITIONS
VDS= 3V
IDS= 12.0A
VDS= 3V
IDS= 200mA
VDS= 3V
VGS= 0V
IGS= -1.0mA
UNIT
S
V
A
V
Thermal Resistance
Rth(c-c) Channel to Case
°C/W
MIN.
48.0
6.5



-25


MIN.

-1.0

-5

TYP. MAX.
49.0 
7.5 
18.0 20.0
 ±0.8
36 
-30 
 16.0
 100
TYP. MAX.
20 
-1.8 -3.0
38 

0.5 0.6
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Aug. 2006