TIM5359-16UL Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM5359-16UL
FEATURES
n HIGH POWER
P1dB=42.5dBm at 5.3GHz to 5.9GHz
n HIGH GAIN
G1dB=10.0dB at 5.3GHz to 5.9GHz
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
P1dB
dBm 41.5 42.5 
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
G1dB
IDS1
∆G
ηadd
IM3
VDS= 10V
f = 5.3 to 5.9GHz
Two-Tone Test
Po= 31.5dBm
dB 9.0 10.0 
A
 4.4 5.0
dB   ±0.6
%
 36 
dBc -44 -47 
Drain Current
Channel Temperature Rise
IDS2
(Single Carrier Level)
A
∆Tch
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
°C
Recommended gate resistance(Rg) : Rg= 100 Ω (MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
 4.4 5.0
  80
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
SYMBOL CONDITIONS
gm VDS= 3V
IDS= 6.0A
VGSoff VDS= 3V
IDS= 60mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -200µA
UNIT MIN. TYP. MAX.
mS  3600 
V -1.0 -2.5 -4.0
A
 10.5 
V
-5  
Thermal Resistance
Rth(c-c) Channel to Case
°^C/W  1.5 1.8
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006