TIM4450-45SL Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM4450-45SL
FEATURES
n LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 35.5dBm
Single Carrier Level
n HIGH POWER
P1dB=46.5dBm at 4.4GHz to 5.0GHz
n HIGH GAIN
G1dB=9.5dB at 4.4GHz to 5.0GHz
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL CONDITIONS
Output Power at 1dB Gain P1dB
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
G1dB
IDS
VDS= 10V
f = 4.4 to 5.0GHz
Gain Flatness
∆G
Power Added Efficiency
ηadd
3rd Order Intermodulation
IM3
Two-Tone Test
Distortion
Po=35.5dBm
(Single Carrier Level)
Channel Temperature Rise ∆Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended Gate Resistance(Rg): 28 Ω (Max.)
UNIT MIN. TYP. MAX.
dBm 46.0 46.5 
dB 8.5 9.5 
A
 9.6 10.8
dB   ±0.8
%
 41 
dBc -42 -45 
°C   100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
VGSO
CONDITIONS
VDS= 3V
IDS= 11.0A
VDS= 3V
IDS= 170mA
VDS= 3V
VGS= 0V
IGS= -500µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS  8000 
V -1.0 -2.5 -4.0
A
 24 
V
-5  
°^C/W  0.8 1.2
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006