TIM1414-8 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1414-8L
FEATURES
„ LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 28.0dBm
Single Carrier Level
„ HIGH POWER
P1dB=39.5 dBm at 14.0 GHz to 14.5 GHz
„ HIGH GAIN
G1dB=5.0 dB at 14.0 GHz to 14.5 GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL CONDITIONS
Output Power at 1dB Gain P1dB
Compression Point
Power Gain at 1dB Gain
G1dB
VDS= 9V
Compression Point
f= 14.0 to 14.5GHz
Drain Current
IDS1
Power Added Efficiency
3^rd Order Intermodulation
ηadd
IM3
Two-Tone Test
Distortion
Po=28. 0dBm
Drain Current
IDS2
(Single Carrier Level)
Channel Temperature Rise
ΔTch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
UNIT
dBm
dB
A
%
dBc
A
°^C
MIN.
38.5
4.0
⎯
⎯
-42
⎯
⎯
TYP. MAX.
39.5 ⎯
5.0 ⎯
3.4 4.4
20 ⎯
-45 ⎯
3.4 4.4
⎯ 80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
Transconductance
gm VDS= 3V
IDS= 4.0 A
Pinch-off Voltage
VGSoff VDS= 3V
IDS= 120mA
Saturated Drain Current
IDSS VDS= 3V
VGS= 0V
Gate-Source Breakdown
VGSO IGS= -120μA
Voltage
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS ⎯ 2400 ⎯
V -2.0 -3.5 -5.0
A
⎯ 8.0 ⎯
V
-5 ⎯ ⎯
°^C/W ⎯ 1.6 2.5
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006