TGI1314-50L Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaN HEMT

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaN HEMT
TGI1314-50L
FEATURES
„ HIGH POWER
Pout=47.0dBm at Pin=42.0dBm
„ HIGH GAIN
GL=8.0dB at 13.75GHz to 14.5GHz
„ BROAD BAND INTERNALLY MATCHED HEMT
HERMETICALLY SEALED PACKAGE
„ LOW INTERMODULATION DISTORTION
IM3(Min.)=−25dBc at Po=40.0dBm
Single Carrier Level
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT
Output Power
Gain Flatness
Drain Current
Power Added Efficiency
Gate Current
Linear Gain
Pout
ΔG
IDS1
ηadd
Ig_RF
GL
VDS = 24V
IDSset≅2.0A
f = 13.75 to 14.5GHz
@ Pin=42dBm
@Pin=20dBm
dBm
dB
A
%
mA
dB
3rd Order Intermodulation
IM3
Two-Tone Test
dBc
Distortion
Drain Current
IDS2
Po= 40.0dBm
(Single Carrier Level)
A
Channel Temperature Rise ΔTch ^{(VDS X IDS + Pin – Pout) X Rth(c-c)}
°^C
MIN.
46.0
－
－
－
-40
7.0
-25
－
－
TYP.
47.0
－
5.0
29
－
8.0
－
5.0
130
MAX.
－
±0.8
6.0
－
+100
－
－
6.0
150
Recommended gate resistance(Rg) : Rg= 13.3 Ω (TYP.)
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
CONDITIONS
gm VDS= 5V
IDS= 5.0A
VGSoff VDS= 5V
IDS= 23mA
IDSS VDS= 5V
VGS= 0V
VGSO IGS= -10mA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
⎯ 4.5 ⎯
V
-1 -4 -6
A
⎯ 15 ⎯
V -10 ⎯ ⎯
°^C/W ⎯ ⎯ 1.6
‹The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by
implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change
without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
Rev. December 9, 2011