TGI0910-50 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaN HEMT

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
„ HIGH POWER
Pout=47.0dBm at Pin=41.0dBm
„ HIGH GAIN
GL=9.0dB at 9.5GHz to 10.5GHz
MICROWAVE POWER GaN HEMT
TGI0910-50
„ BROAD BAND INTERNALLY MATCHED HEMT
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT
Output Power
Drain Current
Power Added Efficiency
Pout
VDS= 24V
dBm
IDS1
IDSset ≅ 1.5A
A
ηadd
f = 9.5G to 10.5GHz
%
@Pin = 41dBm
Linear Gain
Channel Temperature Rise
GL
ΔTch
@Pin = 20dBm
dB
(VDS X IDS1 + Pin – Pout)X Rth(c-c) _°C
MIN.
46.0
－
－
7.0
－
TYP.
47.0
5.0
31
9.0
130
MAX.
－
6.0
－
－
150
Recommended gate resistance(Rg) : Rg=13.3 Ω(TYP.)
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
CONDITIONS
gm VDS= 5V
IDS= 5.0A
VGSoff VDS= 5V
IDS= 23mA
IDSS VDS= 5V
VGS= 0V
VGSO IGS= -10mA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
⎯ 4.5 ⎯
V
-1 -4 -6
A
⎯ 15 ⎯
V -10 ⎯ ⎯
°^C/W ⎯ ⎯ 1.6
‹The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information
contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding
with design of equipment incorporating this product.
Rev. July., 2009