TG2401F Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – GaAs Linear Integrated Circuit GaAs Monolithic

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2401F
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication
TG2401F
Features
Common Block
· Positive voltage operation: VDD1 = VDD2 = 3.0 V,
VDD3 = VDD4 = 3.6 V
· Small package: HSOP20 (0.5 mm pin pitch)
Power Amp. Block
· High power Gain: Gp = 32dB (min)
Antenna Switch Block
· Low insertion Loss: LOSS = 0.8dB (typ.)
· High isolation: ISL = 25dB (typ.)
Weight: 0.058 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
Input power
Power dissipation
Operating temperature range
Storage temperature range
V_DD (Note 1)
5
V
V_GG (Note 2)
4
V
V_C (Note 3)
3.65
V
P_i
1
mW
P_d (Note 4)
4
W
T_opr (Note 5) -40 to 85
°C
T_stg
-55 to 150
°C
Note 1: V_DD = V_DD1 = V_DD2 = V_DD3 = V_DD4 = V_DD (SW)
Note 2: V_GG = V_GG3 = V_GG4
Note 3: V_C = V_C1 = V_C2
Note 4: When mounted on a Teflon board (52 mm ´ 43 mm ´ 0.4 mm) that is fixed to an aluminum plate.
(Ta = 25°C)
Note 5: Not intended to guarantee the following electrical characteristics, which were measured at Ta = 25°C.
Caution
This device is electrostatic sensitivity. Please handle with caution.
1
2003-01-28