TG2216TU Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2216TU
RF SPDT Switch
Antenna switches for Bluetooth Class1, wireless LAN and PHS
Filter switching for mobile communication
Features
TG2216TU
· Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz
= 0.7dB (typ.) @2.5 GHz
· High isolation: ISL = 25dB (typ.) @1.0 GHz
= 23dB (typ.) @2.5 GHz
· High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz
· Low voltage operation: VCON = 0 V/2.7 V
· Small package: UF6 package (2.0 × 2.1 × 0.7 mm)
Pin Connection and Marking (top view)
V_C1 RFcom V_C2
6
5
4
Weight: 0.007g (typ.)
Equivalent Circuit
V_C1 RFcom V_C2
6
5
4
US
1
2
3
RF1 GND RF2
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Control voltage
Input power
Total power dissipation
Operating temperature range
Storage temperature range
V_C1
V_C2
P_i
P_D (Note)
T_opr
T_stg
6
6
1
100
−40 to 85
−55 to 125
Note: When mounted on the glass epoxy of 2.5 cm² × 1.6 t
1
2
3
RF1 GND RF2
Unit
V
W
mW
°C
°C
1
2003-03-20