TG2213S Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2213S
TG2213S
RF SPDT Switch
Antenna switch for Bluetooth class 2, 3
Diversity antenna switching
Filter switching for mobile communication
Local signal switching
Features
· Low insertion Loss: LOSS = 0.35dB (typ.) @1.0 GHz
= 0.45dB (typ.) @2.5 GHz
· High isolation: ISL = 24dB (typ.) @1.0 GHz
= 22dB (typ.) @2.5 GHz
· Low voltage operation: VCON = 0 V/2.7 V
· Small package: sES6 package (1.5 × 1.5 × 0.52 mm)
Pin Assignment, Marking
(top view)
V_C1 RFcom V_C2
6
5
4
Block Diagram
V_C1 RFcom V_C2
6
5
4
UP
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2Q1A
Weight: 2.1 mg (typ.)
1
2
3
RF1 GND RF2
1
2
3
RF1 GND RF2
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Control voltage
Input power
Total power dissipation
Operating temperature range
Storage temperature range
V_C1
6
V
V_C2
6
P_i
200
mW
P_D
(Note)
100
mW
T_opr
−40 to 85
°C
T_stg
−55 to 125
°C
Note: When mounted on the glass epoxy of 2.5 cm² ´ 1.6 t
1
2002-11-14