TG2211FT Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2211FT
RF SPDT Switch
TG2211FT
Antenna switches for Bluetooth class 2 and 3
Switch the diversity antenna
Switch the receive filter for mobile communication
Switch the local signal
Features
· Fewer external parts: On-chip inverter circuit
· Low insertion Loss: LOSS = 0.45dB (typ.) @1.0 GHz
= 0.55dB (typ.) @2.5 GHz
· High isolation: ISL = 25dB (typ.) @1.0 GHz
= 24dB (typ.) @2.5 GHz
· Low voltage operation: VCON = 0 V/2.7 V
· Small package: TU6 package (mold size = 2.0 × 1.25 × 0.6
mm)
Weight: 0.008 g (typ.)
Pin Connection and Marking (top view)
Equivalent Circuit
V_CON RFcom
6
5
V_DD
4
V_CON RFcom
6
5
V_DD
4
UM
1
2
3
RF1 GND RF2
1
2
3
RF1 GND RF2
Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
Control voltage
Input power
Operating temperature range
Storage temperature range
Symbol
Rating
Unit
V_DD
V_CON
P_i
T_opr
T_stg
6
V
6
V
350
mW
−40~85
°C
−55~125
°C
1
2002-07-30