TD62S050AFM Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TD62S050AFM

TD62S050AFM
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Output withstand voltage
Output current
Input voltage
V_CEO
50
V
V_{CE (SUS)}
50
V
I_OUT
500
mA
V_IN
-0.5~30
V
Clamp diode reverse voltage
Clamp diode forward current
Power dissipation
V_R
50
V
I_F
500
mA
P_D (Note 4)
0.78
W
Saturated thermal resistance
R_{th (j-a)}
(Note 4)
160
R_{th (j-c)}
(Note 5)
25
°C/W
Operating temperature
Storage temperature
T_opr
-40~85
°C
T_stg
-55~150
°C
Note 4: 114.3 ´ 76.2 ´ 1.6 mm glass epoxy film substrate Cu heat dissipation pattern 100 mm²
Note 5: When an infinite heat sink is mounted.
Recommended Operating Condition (Ta = -40~85°C)
Characteristics
Output withstand voltage
Output current
Input voltage
Input voltage
Output ON
Output OFF
Clamp diode reverse voltage
Clamp diode forward current
Symbol
Test Condition
V_CEO
I_OUT
V_IN
V_{IN (ON)}
V_{IN (OFF)}
V_R
I_F
¾
Ta = 60°C, T_j = 105°C
¾
I_OUT = 400 mA, h_FE = 800
¾
¾
¾
Min Typ. Max Unit
0
¾
50
V
¾
¾ 220 mA
0
¾
24
V
2.8
¾
24
V
0
¾
0.7
¾
¾
50
V
¾
¾ 350 mA
Electrical Characteristics (Ta = 25°C)
Characteristics
Output leakage current
Output saturation voltage
DC current amplification ratio
Input current
Output ON
Input voltage
Output ON
Output ON
Clamp diode leakage current
Clamp diode forward voltage
Turn-on delay
Turn-off delay
Symbol
Test
Circuit
Test Condition
Min Typ. Max Unit
I_CEX
1 V_CE = 50 V, V_IN = OPEN
¾
¾
10
mA
V_{CE (sat)}
I_OUT = 300 mA, I_IN = 500 mA
2
I_OUT = 200 mA, I_IN = 350 mA
¾
1.1
1.3
V
¾
1.0
1.2
h_FE
2 V_CE = 2.0 V, I_OUT = 350 mA
1000 ¾
¾
I_{IN (ON)}
3 V_IN = 2.4 V, I_OUT = 350 mA
¾
0.4 0.7 mA
V_{IN (ON)}
4
V_CE = 2 V,
h_FE = 800
I_OUT = 350 mA ¾
I_OUT = 200 mA ¾
¾
2.6
¾
2.2
V
I_R
5 V_R = 50 V
¾
¾
10
mA
V_F
6 I_F = 350 mA
¾
1.6 2.0
V
t_ON
t_OFF
7
V_OUT = 50 V, R_L = 125 W,
C_L = 15 pF
¾ 0.02 ¾
ms
¾
1.0
¾
2
2001-12-05