TC7WZ38FU Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Dual 2 Input NAND Gate (Open Drain)

TC7WZ38FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WZ38FU,TC7WZ38FK
Dual 2 Input NAND Gate (Open Drain)
Features
• High output drive: ±24 mA (min) at V_CC = 3 V
• Super high speed operation: t_pZL = 2.2 ns (typ.)
at V _CC = 5 V, 50 pF
• Operation voltage range: V_{CC (opr)} = 1.65~5.5 V
• 5.5-V tolerant inputs
• 5.5-V power down protection outputs
• Matches the performance of TC74LCX series when operated at
3.3-V V_CC
TC7WZ38FU
TC7WZ38FK
Marking
SM8
Z 38
Type name
US8
Lot No.
WZ
38
Weight
SSOP8-P-0.65
SSOP8-P-0.50A
: 0.02 g (typ.)
: 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10s)
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
Rating
−0.5~6
−0.5~6
−0.5~6
−20
−20
50
±50
300 (SM8)
200 (US8)
−65~150
260
Unit Pin Assignment (top view)
V
V
1A 1
V
1B 2
mA
mA
2Y 3
mA
GND 4
mA
8 V_CC
7 1Y
6 2B
5 2A
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01