TC7WZ00FU Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – 2 Input Nand Gate

TC7WZ00FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WZ00FU,TC7WZ00FK
2 Input Nand Gate
Features
· High output drive: ±24 mA (min) @VCC = 3 V
· Super high speed operation: tpd 2.4 ns (typ.) @VCC = 5 V,
50 pF
· Operation voltage range: VCC (opr) = 1.65~5.5 V
· Latch-up performance: ±500 mA or more
· ESD performance: ±200 V or more (JEITA)
±2000 V or more (MIL)
· Power down protection is provided on all inputs and outputs.
· Matches the performance of TC74LCX series when operated
at 3.3 V VCC.
TC7WZ00FU
TC7WZ00FK
Marking
SM8
Z 00
Type name
Lot No.
US8
WZ
00
Maximum Ratings (Ta = 25°C)
Characteristics
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10s)
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
Weight
SSOP8-P-0.65
SSOP8-P-0.50A
: 0.02 g (typ.)
: 0.01 g (typ.)
Rating
-0.5~6
-0.5~6
-0.5~6
-20
-20
±50
±50
300 (SM8)
200 (US8)
-65~150
260
Unit ^{Pin Assignment (top view)}
V
V
1A 1
V
1B 2
mA
2Y 3
mA
mA
GND 4
mA
8 V_CC
7 1Y
6 2B
5 2A
mW
°C
°C
1
2002-01-16