TC7WZ00FK_09 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WZ00FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WZ00FU,TC7WZ00FK
Dual 2-Input NAND Gate
Features
• High output current
: ±24 mA (min) at V_CC = 3 V
• Super high speed operation : t_pd = 2.4 ns (typ.)
at V_CC = 5 V, 50 pF
• Operating voltage range : V_CC = 1.65 to 5.5 V
• 5.5-V tolerant inputs
• 5.5-V power down protection outputs
• Matches the performance of TC74LCX series when operated at
3.3 V V_CC.
TC7WZ00FU
TC7WZ00FK
(SM8)
Marking
SM8
Z 00
US8
Product Name
Lot No.
WZ
00
Absolute Maximum Ratings (Ta = 25°C)
Weight
SSOP8-P-0.65
SSOP8-P-0.50A
(US8)
: 0.02 g (typ.)
: 0.01 g (typ.)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10s)
Symbol
Rating
Unit
V_CC
−0.5 to 6
V
V_IN
−0.5 to 6
V
−0.5 to 6 (Note 1)
V_OUT
V
−0.5 to V_CC +0.5 (Note 2)
I_IK
−20
mA
I_OK
−20 (Note 3) mA
I_OUT
±50
mA
I_CC
±50
mA
P_D
300 (SM8)
200 (US8)
mW
T_stg
−65 to 150
°C
T_L
260
°C
Pin Assignment (top view)
1A 1
1B 2
2Y 3
GND 4
8 V_CC
7 1Y
6 2B
5 2A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V_CC = 0V
Note 2: High or Low state. Do not exceed I_OUT of absolute maximum ratings.
Note 3: V_OUT < GND
1
2009-09-09