English
Language : 

TC7WH32FU_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input OR Gate
TC7WH32FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WH32FU,TC7WH32FK
Dual 2-Input OR Gate
The TC7WH32 is an advanced high speed CMOS 2-Input OR
Gate fabricated with silicon gate CMOS technology. It achieves
the high speed operation similar to equivalent Bipolar Schottky
TTL while maintaining the CMOS low power dissipation. The
internal circuit is composed of 4 stages including buffer output,
which provide high noise immunity and stable output. An input
protection circuit ensures that 0 to 7 V can be applied to the
input pins without regard to the supply voltage. This device can
be used to interface 5 V to 3 V systems and two supply systems
such as battery back up. This circuit prevents device destruction
due to mismatched supply and input voltages.
Features
• High speed: tpd = 3.8 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Power down protection is provided on all inputs.
• Balanced propagation delays: tpLH ∼− tpHL
• Wide operating voltage range: VCC (opr) = 2~5.5 V
Marking
SM8
US8
TC7WH32FU
TC7WH32FK
Weight
SSOP8-P-0.65: 0.02 g (typ.)
SSOP8-P-0.50A: 0.01 g (typ.)
Pin Assignment (top view)
1
2007-11-01