TC7WH125FK_09 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WH125FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WH125FU,TC7WH125FK
Dual Bus Buffer with 3-STATE Output
Features
High speed t_pd = 3.8 ns (typ.) at V_CC = 5.0 V, C_L=15pF
• Low power dissipation: ICC=2μA (max.) at Ta = 25°C
• High noise immunity : V_NIH = V_NIL = 28%Vcc (min.)
• 5.5-V tolerant inputs
• Wide operating voltage range: V_CC = 2.0 to 5.5 V
• Low Noise : V_OLP = 0.8V(max.)
TC7WH125FU
Marking
TC7WH125FK
(SM8)
SM8
US8
Product name
H 125
Lot. No
WH
125
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
(US8)
Absolute Maximum Ratings (Ta = 25°C)
Pin Assignment (top view)
Characteristics
Symbol
Rating
Unit
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC / GND current
Power dissipation
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
−0.5 to 7.0
V
−0.5 to 7.0
V
−0.5 to Vcc + 0.5
V
−20
mA
±20 (Note 1) mA
±25
mA
±50
mA
300 (SM8)
200 (US8)
mW
G1 1
A1 2
Y2 3
GND 4
8 V_CC
7 G2
6 Y1
5 A2
Storage temperature
Lead temperature (10s)
T_stg
−65 to 150
°C
T_L
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V_OUT < GND,V_OUT>V_CC
1
2009-09-24