TC7WG126FK_09 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Dual Bus Buffer with 3-STATE Output

TC7WG126FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG126FU,TC7WG126FK
Dual Bus Buffer with 3-STATE Output
Features
 High output current: ±8 mA (min) at V_CC = 3V
 Super high speed operation: t_pd = 2.5 ns (typ.)
at V_CC = 3.3V, 15pF
 Operating voltage range: V_CC = 0.9 to 3.6 V
 5.5-V tolerant inputs
 3.6-V power down protection outputs
TC7WG126FU
Marking
TC7WG126FK
(SM8)
SM8
US8
Product name
G 126
Lot. No
WG
126
Absolute Maximum Ratings (Ta = 25°C)
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
(US8)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC / ground current
Power dissipation
Storage temperature
Symbol
Rating
Unit
V_CC
−0.5 to 4.6
V
V_IN
−0.5 to 7.0
V
V_OUT
0.5 to 4.6 (Note 1)
0.5 to V_CC  0.5 (Note 2)
V
I_IK
−20
mA
I_OK
−20(Note 3)
mA
I_OUT
±25
mA
I_CC
±100
mA
P_D
300 (SM8)
200 (US8)
mW
T_stg
−65 to 150
°C
Pin Assignment (top view)
G1 1
A1 2
Y2 3
GND 4
8 V_CC
7 G2
6 Y1
5 A2
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V_CC = 0V
Note 2: High or Low State. Do not exceed I_OUT of absolute maximum ratings.
Note 3: V_OUT < GND
1
2009-09-24